Module Manufacturer: Patriot Memory
Module Part Number: 3600 C18 Series
DRAM Manufacturer: SpecTek
DRAM Components: MT40A2G8??-075:[B/E]
Component Design ID: Not determined
DRAM Die Revision / Process Node: N/A / Not determined
Module Manufacturing Date: Undefined
Module Manufacturing Location: Taipei, Taiwan
Module Serial Number: 00000000h
Module PCB Revision: 01h
Physical & Logical Attributes Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2666V downbin
Base Module Type: UDIMM (133,35 mm)
Module Capacity: 16 GB
Reference Raw Card: A0 (8 layers)
JEDEC Raw Card Designer: SK hynix
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: T <= 1 mm
Number of DIMM Ranks: 1
Address Mapping from Edge Connector to DRAM: Standard
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 17 bits
Number of Bank Addresses: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
DRAM Device Width: 8 bits
Programmed DRAM Density: 16 Gb
Calculated DRAM Density: 16 Gb
Number of DRAM components: 8
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
DRAM Post Package Repair: Supported
Soft Post Package Repair: Supported
DRAM Timing Parameters Fine Timebase: 0,001 ns
Medium Timebase: 0,125 ns
CAS Latencies Supported: 10T, 11T, 12T, 13T,
14T, 15T, 16T, 17T,
18T, 19T, 20T
Minimum Clock Cycle Time (tCK min): 0,750 ns (1333,33 MHz)
Maximum Clock Cycle Time (tCK max): 1,600 ns (625,00 MHz)
CAS# Latency Time (tAA min): 13,750 ns
RAS# to CAS# Delay Time (tRCD min): 13,750 ns
Row Precharge Delay Time (tRP min): 13,750 ns
Active to Precharge Delay Time (tRAS min): 32,000 ns
Act to Act/Refresh Delay Time (tRC min): 45,750 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 550,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 350,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 260,000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3,000 ns
Long Row Active to Row Active Delay (tRRD_L min): 4,900 ns
Write Recovery Time (tWR min): 15,000 ns
Short Write to Read Command Delay (tWTR_S min): 2,500 ns
Long Write to Read Command Delay (tWTR_L min): 7,500 ns
Long CAS to CAS Delay Time (tCCD_L min): 5,000 ns
Four Active Windows Delay (tFAW min): 21,000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1,20 V operable/endurant: Yes/Yes
Supply Voltage (VDD), Min / Typical / Max: 1,16V / 1,20V / 1,26V
Activation Supply Voltage (VPP), Min / Typical / Max: 2,41V / 2,50V / 2,75V
Termination Voltage (VTT), Min / Typical / Max: 0,565V / 0,605V / 0,640V
Thermal Parameters Module Thermal Sensor: Not Incorporated
SPD Protocol SPD Revision: 1.1
SPD Bytes Total: 512
SPD Bytes Used: 384
SPD Checksum (Bytes 00h-7Dh): 4BB3h (OK)
SPD Checksum (Bytes 80h-FDh): B2ADh (OK)
Part number details JEDEC DIMM Label: 16GB 1Rx8 PC4-2666V-UA0-11
Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW
1333 MHz 20 19 19 43 61 4 7 20 4 10 28
1333 MHz 19 19 19 43 61 4 7 20 4 10 28
1200 MHz 18 17 17 39 55 4 6 18 3 9 26
1200 MHz 17 17 17 39 55 4 6 18 3 9 26
1067 MHz 16 15 15 35 49 4 6 16 3 8 23
1067 MHz 15 15 15 35 49 4 6 16 3 8 23
933 MHz 14 13 13 30 43 3 5 14 3 7 20
933 MHz 13 13 13 30 43 3 5 14 3 7 20
800 MHz 12 11 11 26 37 3 4 12 2 6 17
800 MHz 11 11 11 26 37 3 4 12 2 6 17
667 MHz 10 10 10 22 31 2 4 10 2 5 14
Intel Extreme Memory Profiles Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 1 DIMM/channel
XMP Parameter Profile 1 Profile 2
Speed Grade: DDR4-3604 N/A
DRAM Clock Frequency: 1802 MHz N/A
Module VDD Voltage Level: 1,35 V N/A
Minimum DRAM Cycle Time (tCK): 0,555 ns N/A
CAS Latencies Supported: 23T,22T,21T,20T,
19T,18T,17T,16T,
15T,14T,13T,12T,
11T,9T N/A
CAS Latency Time (tAA): 18T N/A
RAS# to CAS# Delay Time (tRCD): 22T N/A
Row Precharge Delay Time (tRP): 22T N/A
Active to Precharge Delay Time (tRAS): 42T N/A
Active to Active/Refresh Delay Time (tRC): 68T N/A
Four Activate Window Delay Time (tFAW): 40T N/A
Short Activate to Activate Delay Time (tRRD_S): 9T N/A
Long Activate to Activate Delay Time (tRRD_L): 10T N/A
Normal Refresh Recovery Delay Time (tRFC1): 991T N/A
2x mode Refresh Recovery Delay Time (tRFC2): 631T N/A
4x mode Refresh Recovery Delay Time (tRFC4): 469T N/A

Module Manufacturer: Patriot Memory
Module Part Number: 3600 C18 Series
DRAM Manufacturer: Hynix
DRAM Components: H5AN8G8N?FR-TFC
DRAM Die Revision / Process Node: N/A / Not determined
Module Manufacturing Date: Week 25, 2021
Manufacturing Date Decoded: June 21-25, 2021
Module Manufacturing Location: Taipei, Taiwan
Module Serial Number: 062201ACh
Module PCB Revision: 01h
Physical & Logical Attributes Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2133P downbin
Base Module Type: UDIMM (133,35 mm)
Module Capacity: 16 GB
Reference Raw Card: B0 (8 layers)
JEDEC Raw Card Designer: Micron Technology
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 2
Address Mapping from Edge Connector to DRAM: Mirrored
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 16 bits
Number of Bank Addresses: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
DRAM Device Width: 8 bits
Programmed DRAM Density: 8 Gb
Calculated DRAM Density: 8 Gb
Number of DRAM components: 16
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
DRAM Post Package Repair: Not supported
Soft Post Package Repair: Not supported
DRAM Timing Parameters Fine Timebase: 0,001 ns
Medium Timebase: 0,125 ns
CAS Latencies Supported: 10T, 11T, 12T, 13T,
14T, 15T, 16T
Minimum Clock Cycle Time (tCK min): 0,938 ns (1066,10 MHz)
Maximum Clock Cycle Time (tCK max): 1,500 ns (666,67 MHz)
CAS# Latency Time (tAA min): 13,500 ns
RAS# to CAS# Delay Time (tRCD min): 13,500 ns
Row Precharge Delay Time (tRP min): 13,500 ns
Active to Precharge Delay Time (tRAS min): 33,000 ns
Act to Act/Refresh Delay Time (tRC min): 46,500 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 160,000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3,700 ns
Long Row Active to Row Active Delay (tRRD_L min): 5,300 ns
Long CAS to CAS Delay Time (tCCD_L min): 5,625 ns
Four Active Windows Delay (tFAW min): 21,000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1,20 V operable/endurant: Yes/Yes
Supply Voltage (VDD), Min / Typical / Max: 1,16V / 1,20V / 1,26V
Activation Supply Voltage (VPP), Min / Typical / Max: 2,41V / 2,50V / 2,75V
Termination Voltage (VTT), Min / Typical / Max: 0,565V / 0,605V / 0,640V
Thermal Parameters Module Thermal Sensor: Not Incorporated
SPD Protocol SPD Revision: 1.0
SPD Bytes Total: 512
SPD Bytes Used: 384
SPD Checksum (Bytes 00h-7Dh): 5459h (OK)
SPD Checksum (Bytes 80h-FDh): 27DEh (OK)
Part number details JEDEC DIMM Label: 16GB 2Rx8 PC4-2133P-UB0-10
Frequency CAS RCD RP RAS RC RRDS RRDL CCDL FAW
1067 MHz 16 15 15 36 50 4 6 6 23
1067 MHz 15 15 15 36 50 4 6 6 23
933 MHz 14 13 13 31 44 4 5 6 20
933 MHz 13 13 13 31 44 4 5 6 20
800 MHz 12 11 11 27 38 3 5 5 17
800 MHz 11 11 11 27 38 3 5 5 17
667 MHz 10 9 9 22 31 3 4 4 14
Intel Extreme Memory Profiles Profiles Revision: 2.0
Profile 1 (Certified) Enables: Yes
Profile 2 (Extreme) Enables: No
Profile 1 Channel Config: 1 DIMM/channel
XMP Parameter Profile 1 Profile 2
Speed Grade: DDR4-3604 N/A
DRAM Clock Frequency: 1802 MHz N/A
Module VDD Voltage Level: 1,35 V N/A
Minimum DRAM Cycle Time (tCK): 0,555 ns N/A
CAS Latencies Supported: 23T,22T,21T,20T,
19T,18T,17T,16T,
15T,14T,13T,12T,
11T,9T N/A
CAS Latency Time (tAA): 18T N/A
RAS# to CAS# Delay Time (tRCD): 22T N/A
Row Precharge Delay Time (tRP): 22T N/A
Active to Precharge Delay Time (tRAS): 42T N/A
Active to Active/Refresh Delay Time (tRC): 68T N/A
Four Activate Window Delay Time (tFAW): 40T N/A
Short Activate to Activate Delay Time (tRRD_S): 9T N/A
Long Activate to Activate Delay Time (tRRD_L): 10T N/A
Normal Refresh Recovery Delay Time (tRFC1): 631T N/A
2x mode Refresh Recovery Delay Time (tRFC2): 469T N/A
4x mode Refresh Recovery Delay Time (tRFC4): 289T N/A