Manufacturing Description Module

Manufacturer: Crucial Technology
Module Part Number: CT8G4DFS8266.M8FE
DRAM Manufacturer: Micron Technology
DRAM Components: D9VPP (MT40A1G8SA-075:E)
Component Design ID: Z11B
DRAM Die Revision / Process Node: E / 19 nm
Module Manufacturing Date: Week 25, 2019
Manufacturing Date Decoded: June 17-21, 2019
Module Manufacturing Location: Boise, USA (SIG) 
Module PCB Revision: 00h


Physical & Logical Attributes

Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2666V downbin
Base Module Type: UDIMM (133,35 mm)
Module Capacity: 8192 MB
Reference Raw Card: A2 (8 layers)
JEDEC Raw Card Designer: SK hynix
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: T <= 1 mm
Number of DIMM Ranks: 1
Address Mapping from Edge Connector to DRAM: Standard
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 16 bits
Number of Bank Addresses: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
DRAM Device Width: 8 bits
Programmed DRAM Density: 8 Gb
Calculated DRAM Density: 8 Gb
Number of DRAM components: 8
DRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
DRAM Post Package Repair: Supported
Soft Post Package Repair: Supported


DRAM Timing Parameters

Fine Timebase: 0,001 ns
Medium Timebase: 0,125 ns
CAS Latencies Supported: 9T, 10T, 11T, 12T,
13T, 14T, 15T, 16T,
17T, 18T, 19T, 20T, 21T, 22T, 23T
Minimum Clock Cycle Time (tCK min): 0,750 ns (1333,33 MHz)
Maximum Clock Cycle Time (tCK max): 1,900 ns (526,32 MHz)
CAS# Latency Time (tAA min): 13,750 ns
RAS# to CAS# Delay Time (tRCD min): 13,750 ns
Row Precharge Delay Time (tRP min): 13,750 ns
Active to Precharge Delay Time (tRAS min): 32,000 ns
Act to Act/Refresh Delay Time (tRC min): 45,750 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 350,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 260,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 160,000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3,000 ns
Long Row Active to Row Active Delay (tRRD_L min): 4,900 ns
Write Recovery Time (tWR min): 15,000 ns
Short Write to Read Command Delay (tWTR_S min): 2,500 ns
Long Write to Read Command Delay (tWTR_L min): 7,500 ns
Long CAS to CAS Delay Time (tCCD_L min): 5,000 ns
Four Active Windows Delay (tFAW min): 21,000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1,20 V operable/endurant: Yes/Yes

JEDEC DIMM Label: 8GB 1Rx8 PC4-2666V-UA2-11
Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW
1333 MHz 23 19 19 43 61 4 7 20 4 10 28
1333 MHz 22 19 19 43 61 4 7 20 4 10 28
1333 MHz 21 19 19 43 61 4 7 20 4 10 28
1333 MHz 20 19 19 43 61 4 7 20 4 10 28
1333 MHz 19 19 19 43 61 4 7 20 4 10 28
1200 MHz 18 17 17 39 55 4 6 18 3 9 26
1200 MHz 17 17 17 39 55 4 6 18 3 9 26
1067 MHz 16 15 15 35 49 4 6 16 3 8 23
1067 MHz 15 15 15 35 49 4 6 16 3 8 23
933 MHz 14 13 13 30 43 3 5 14 3 7 20
933 MHz 13 13 13 30 43 3 5 14 3 7 20
800 MHz 12 11 11 26 37 3 4 12 2 6 17
800 MHz 11 11 11 26 37 3 4 12 2 6 17
667 MHz 10 10 10 22 31 2 4 10 2 5 14
526 MHz 9 8 8 17 25 2 3 8 2 4 12