Manufacturing Description Module Manufacturer: Corsair
SDRAM Manufacturer: Undefined
Module Part Number: CML16GX3M2A1600C9
Module Series: Vengeance LP
Module Manufacturing Date: Week 2A, 200C
Module Manufacturing Location: Taiwan
Module Serial Number: 00000000h
Module PCB Revision: (00h)
SDRAM Die Revision: (00h)

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Legitimate Architectures Fundamental Memory Class: DDR3 SDRAM
Module Speed Grade: DDR3-1333H
Module Type: UDIMM (133,35 mm)
Module Capacity: 8192 MB
Module Nominal Height: 29 < H <= 30 mm
Module Thickness Maximum, Front: 2 < T <= 3 mm
Module Thickness Maximum, Back: 2 < T <= 3 mm
Reference Raw Card: B
Reference Raw Card Revision: 0
Number of DIMM Ranks: 2
SDRAM Device Package: Standard Monolithic
SDRAM Device Die Count: Not specified
Signal Loading: Not specified
Number of Column Addresses: 10 bits
Number of Row Addresses: 16 bits
Number of Bank Addresses: 3 bits (8 banks)
SDRAM Device Width: 8 bits
Programmed SDRAM Capacity: 4 Gb
Calculated SDRAM Capacity: 4 Gb
SDRAM Page Size: 1 KB
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 0 bits
Supported Voltage Levels: 1.50 V

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DRAM Timing Parameters Fine Timebase Dividend: 1
Fine Timebase Divisor: 1
Fine Timebase: 0,0010 ns
Medium Timebase Dividend: 1
Medium Timebase Divisor: 8
Medium Timebase: 0,125 ns
Clock Cycle Time (tCK min): 1,500 ns
CAS# Latencies Supported (tCL): 6T, 7T, 9T
CAS# Latency Time (tAA min): 13,125 ns
RAS# to CAS# Delay Time (tRCD min): 13,125 ns
Row Active to Row Active Delay (tRRD min): 6,000 ns
Row Precharge Delay Time (tRP min): 13,125 ns
Active to Precharge Delay Time (tRAS min): 36,000 ns
Act to Act/Refresh Delay Time (tRC min): 48,125 ns
Refresh Recovery Delay Time (tRFC min): 260,000 ns
Write Recovery Time (tWR min): 15,000 ns
Write to Read Command Delay (tWTR min): 7,500 ns
Read to Precharge Command Delay (tRTP min): 7,500 ns
Four Active Windows Delay (tFAW min): 30,000 ns
RZQ / 6 Drive Strength: Supported
RZQ / 7 Drive Strength: Supported
DLL-Off Mode Support: Supported

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Thermal Parameters Extended Temperature Range: 0-95 °C
Extended Temperature Refresh Rate: 2X (85-95 °C)
Auto Self Refresh (depending on temperature): Not supported
Module Thermal Sensor: Not Incorporated
On-die Thermal Sensor Readout: Not supported
Partial Array Self Refresh: Supported

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SPD Protocol SPD Revision: 1.1
SPD Bytes Total: 256
SPD Bytes Used: 176
SPD Checksum: 93D5h (OK)
CRC covers bytes: 0-116

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Part number details JEDEC DIMM Label: 8GB 2R x8 PC3-10600U-9-11-B0

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Timing table Frequency tCL tRCD tRP tRAS tRC tRFC tRRD tWR tWTR tRTP
667 MHz 9 9 9 24 33 174 4 10 5 5
533 MHz 7 7 7 20 26 139 4 8 4 4
400 MHz 6 6 6 15 20 104 3 6 3 3

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Intel Extreme Memory Profiles Profiles Revision: 1.3
Profile 1 (Enthusiast) Enables: Yes
Profile 2 (Extreme) Enables: No
Profiles 1 Recommended Channel Config: 1 DIMM per channel
XMP Parameter Profile 1 Profile 2
Speed Grade: DDR3-1600 N/A
RAM Clock Frequency: 800 MHz N/A
Module VDD Voltage Level: 1,50 V N/A
Memory Controller Voltage Level: 1,20 V N/A
Minimum SDRAM Cycle Time (tCK): 1,25 ns N/A
CAS Latencies Supported: 9T,6T N/A
CAS Latency Time (tAA): 9T N/A
CAS Write Latency Time (tCWL): 8T N/A
RAS# to CAS# Delay Time (tRCD): 9T N/A
Row Precharge Delay Time (tRP): 9T N/A
Active to Precharge Delay Time (tRAS): 24T N/A
Active to Active/Refresh Delay Time (tRC): 41T N/A
Refresh Recovery Delay Time (tRFC): 208T N/A
Row Active to Row Active Delay Time (tRRD): 6T N/A
Write Recovery Time (tWR): 12T N/A
Write to Read CMD Delay Time (tWTR): 6T N/A
Read to Precharge CMD Delay (tRTP): 6T N/A
Four Activate Window Delay Time (tFAW): 30T N/A
System CMD Rate Mode: 2T N/A
Maximum tREFI Time: 7T N/A
Show delays in nanoseconds